SHF-0289 datasheet(5/8 Pages) ETC

Part #	SHF-0289

Description	DC-3 GHz, 1.0 Watt GaAs HFET

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Manufacturer	ETC [List of Unclassifed Manufacturers]

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5

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

Preliminary

EDS-101241 Rev A

SHF-0289 DC-3GHz, 1 Watt GaAs HFET

Preliminary

6

9

12

15

18

1.5

1 .7

1.9

2 .1

2.3

-3 8

-3 5

-3 2

-2 9

-2 6

-3 0

-2 5

-2 0

-1 5

-1 0

-5

0

1.5

1 .7

1.9

2 .1

2.3

Frequency GHz

S

11

S

12

S

21

10

20

30

40

0

5

10

15

2 0

Pin (dBm)

Note: s-parameters determined using applications circuit shown above

Test Data @ 1.9 GHz

P

1dB(dBm)

IP3(dBm)

Output tone Level (dBm)

30.5

46.0

15

.

g

i

s

e

d

.f

e

Re

u

l

a

Ve

l

y

t

S

/

r

e

b

m

u

N

t

r

a

P

1

d

CF

p

0

2

2s

e

i

r

e

s

8

1

H

C

M

H

O

R

8

,

7

,

6

,

3

,

2

d

CF

p

3

3s

e

i

r

e

s

8

1

H

C

M

H

O

R

9

d

CF

p

0

1s

e

i

r

e

s

8

1

H

C

M

H

O

R

4

d

CF

p

0

1s

e

i

r

e

s

8

1

H

C

M

H

O

R

0

1

d

CF

u

1

.

0tl

o

v

5

3

,"

A

"

e

z

i

s

,

M

U

L

A

T

N

A

T

5

d

CF

u

0

1tl

o

v

5

3

,"

A

"

e

z

i

s

,

M

U

L

A

T

N

A

T

1

M

CF

p

7

.

2s

e

i

r

e

s

8

1

H

C

M

H

O

R

2

M

CF

p

2

.

2s

e

i

r

e

s

8

1

H

C

M

H

O

R

1

s

a

i

b

LH

n

0

1T

N

0

1

H

F

-

8

0

6

1

L

O

K

O

T

2

s

a

i

b

LH

n

2

2T

N

2

H

F

-

8

0

6

1

L

O

K

O

T

1

b

a

t

s

Rs

m

h

o

1

.

53

0

6

0

e

z

i

s

2

b

a

t

s

Rs

m

h

o

0

23

0

6

0

e

z

i

s

.

g

i

s

e

d

.f

e

Re

u

l

a

V

1

Zz

H

M

0

9

1

@

.

g

e

d

5

.

5

,

s

m

h

o

0

5

2

Zz

H

M

0

9

1

@

.

g

e

d

9

.

7

1

,

s

m

h

o

0

5

3

Zz

H

M

0

9

1

@

.

g

e

d

5

.

5

,

s

m

h

o

0

5

4

Zz

H

M

0

9

1

@

.

g

e

d

7

2

,

s

m

h

o

0

5

Zz

H

M

0

9

1

@

.

g

e

d

8

.

5

,

s

m

h

o

0

5

ς

Ω

S

22

0

20

40

60

15

20

25

30

35

27 0

35 0

43 0

51 0

D r a in E ffic ien c y

ID

Pout(dBm)

Phase shift functional block between components

are calculated based on wavelength of 1900 MHz

signal on FR4 board material with dielectric con-

stant of 4.1, microstrip width and height dimen-

sions of W=.054 inch and h= .031 inch.

P

out vs. Pin

T=25οC

S

11 & S22 vs. Frequency

T=25oC

S

21 & S12 vs. Frequency

T=25oC

Drain Efficiency & I

Dvs. Pout

T=25οC

1.9 GHz Application Circuit at 25

°°°°° C (Vds=8V, Idq=250mA)

Microstrip Segment Specifications

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