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STF18N60M2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF18N60M2
Description  Low gate input resistance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF18N60M2 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID024729 Rev 3
5/13
STF18N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
13
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
52
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 13 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 13 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 16)
-305
ns
Q
rr
Reverse recovery charge
-
3.3
μC
I
RRM
Reverse recovery current
-
22
A
t
rr
Reverse recovery time
I
SD
= 13 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 16)
-417
ns
Q
rr
Reverse recovery charge
-
4.6
μC
I
RRM
Reverse recovery current
-
22
A


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