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RN1114 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN1114
Description  Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1114 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN1114~RN1118
2001-06-07
2
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN1114~1118
ICBO
―
VCB = 50V, IE = 0
―
―
100
nA
Collector cut-off current
RN1114~1118
ICEO
―
VCE = 50V, IB = 0
―
―
500
nA
RN1114
―
VEB = 5V, IC = 0
0.35
―
0.65
RN1115
―
VEB = 6V, IC = 0
0.37
―
0.71
RN1116
―
VEB = 7V, IC = 0
0.36
―
0.68
RN1117
―
VEB = 15V, IC = 0
0.78
―
1.46
Emitter cut-off current
RN1118
IEBO
―
VEB = 25V, IC = 0
0.33
―
0.63
mA
RN1114~16, 18
―
50
―
―
DC current gain
RN1117
hFE
―
VCE = 5V, IC = 10mA
30
―
―
―
Collector-emitter
saturation voltage
RN1114~1118
VCE (sat)
―
IC = 5mA, IB = 0.25mA
―
0.1
0.3
V
RN1114
―
0.6
―
2.0
RN1115
―
0.7
―
2.5
RN1116
―
0.8
―
2.5
RN1117
―
1.5
―
3.5
Input voltage (ON)
RN1118
VI (ON)
―
VCE = 0.2V, IC = 5mA
2.5
―
10.0
V
RN1114
―
0.3
―
0.9
RN1115
―
0.3
―
1.0
RN1116
―
0.3
―
1.1
RN1117
―
0.3
―
2.3
Input voltage (OFF)
RN1118
VI (OFF)
―
VCE = 5V, IC = 0.1mA
0.5
―
5.7
V
Translation Frequency
RN1114~1118
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector output
capacitance
RN1114~1118
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
―
3.0
6.0
pF
RN1114
―
0.7
1.0
1.3
RN1115
―
1.54
2.2
2.86
RN1116
―
3.29
4.7
6.11
RN1117
―
7.0
10.0
13.0
Input Resistor
RN1118
R1
―
―
32.9
47.0
61.1
kΩ
RN1114
―
―
0.1
―
RN1115
―
―
0.22
―
RN1116
―
―
0.47
―
RN1117
―
―
2.13
―
Resistor Ratio
RN1118
R1/R2
―
―
―
4.7
―
―


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