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STF6N80K5 Datasheet(PDF) 3 Page - STMicroelectronics |
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STF6N80K5 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page DocID024664 Rev 4 3/15 STF6N80K5, STFI6N80K5 Electrical ratings 15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage 30 V ID Drain current (continuous) at TC = 25 °C 4.5(1) 1. Limited by maximum junction temperature A ID Drain current (continuous) at TC = 100 °C 2.8 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 18 A PTOT Total dissipation at TC = 25 °C 25 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) 1.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 85 mJ dv/dt (3) 3. ISD ≤ 4.5 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) 4. VDS ≤ 640 V MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2500 V Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-amb 62.5 |
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