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STF5N105K5 Datasheet(PDF) 3 Page - STMicroelectronics |
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3 / 14 page STF5N105K5 Electrical ratings DocID026702 Rev 5 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 3 (1) A ID Drain current (continuous) at TC = 100 °C 2 (1) A IDM (2) Drain current (pulsed) 12 A PTOT Total dissipation at TC = 25 °C 25 W IAR Max current during repetitive or single pulse avalanche 1 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 85 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) 2500 V dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns Tj Operating junction temperature - 55 to 150 °C Tstg Storage temperature Notes: (1)Limited only by maximum junction temperature (2)Pulse width limited by safe operating area. (3)ISD ≤ 3 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS (4)VDS ≤ 840 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 5 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 °C/W |
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