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STD12N65M2 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD12N65M2 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 16 page STD12N65M2 Electrical ratings DocID027317 Rev 2 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 8 A ID Drain current (continuous) at TC = 100 °C 5 A IDM (1) Drain current (pulsed) 32 A PTOT Total dissipation at TC = 25 °C 85 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature - 55 to 150 °C Tj Operating junction temperature Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 8 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 520 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.47 °C/W Rthj-pcb Thermal resistance junction-pcb max (1) 50 °C/W Notes: (1) When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 1.6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 250 mJ |
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