Electronic Components Datasheet Search |
|
STB26NM60ND Datasheet(PDF) 6 Page - STMicroelectronics |
|
STB26NM60ND Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 23 page Electrical characteristics STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND 6/23 DocID025283 Rev 1 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 21 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 84 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 21 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 21 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) - 170 ns Qrr Reverse recovery charge - 1.39 µC IRRM Reverse recovery current - 14 A trr Reverse recovery time ISD = 21 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) - 230 ns Qrr Reverse recovery charge - 2.24 µC IRRM Reverse recovery current - 18 A |
Similar Part No. - STB26NM60ND |
|
Similar Description - STB26NM60ND |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |