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STB6N60M2 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB6N60M2 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 21 page DocID024772 Rev 3 3/21 STB6N60M2, STD6N60M2 Electrical ratings 21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 4.5 A ID Drain current (continuous) at TC = 100 °C 2.9 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 18 A PTOT Total dissipation at TC = 25 °C 60 W dv/dt (2) 2. ISD ≤ 4.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V Peak diode recovery voltage slope 15 V/ns dv/dt (3) 3. VDS ≤ 480 V MOSFET dv/dt ruggedness 50 Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Table 3. Thermal data Symbol Parameter Value Unit D2PAK DPAK Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-pcb Thermal resistance junction-pcb max(1) 1. When mounted on 1 inch² FR-4, 2 Oz copper board 30 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD= 50 V) 86 mJ |
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