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BCW68G Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BCW68G Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification PNP General Purpose Amplifier BCW67/BCW68 C161 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA IE=0 BCW67 BCW68 -45 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA IB=0 BCW67 BCW68 -32 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA IC=0 -5 V Collector cut-off current ICBO VCB=-32V IE=0 BCW67 VCB=-45V IE=0 BCW68 -20 -20 nA Emitter cut-off current IEBO VEB=-4V IC=0 -20 nA DC current gain A/F B/G C/H hFE VCE=-10V IC=-0.1mA 35 50 80 DC current gain A/F B/G C/H hFE VCE=-1V IC=-10mA 75 120 180 DC current gain A/F B/G C/H hFE VCE=-1V IC=-100mA 100 160 250 160 250 350 250 400 630 DC current gain A/F B/G C/H hFE VCE=-2V IC=-500mA 35 60 100 Collector-emitter saturation voltage VCE(sat) IC=-100mA IB=-10mA IC=-500mA IB=-50mA -0.3 -0.7 V Base-emitter saturation voltage VBE(sat) IC=-100mA IB=-10mA IC=-500mA IB=-50mA -1.25 -2 V V Transition frequency fT VCE=-5V IC=-50mA f=20MHz 200 MHz |
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