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TN3050H-12GY-TR Datasheet(PDF) 2 Page - STMicroelectronics |
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TN3050H-12GY-TR Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page  Characteristics TN3050H-12GY-TR 2/10 DocID029684 Rev 1 1 Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 ° conduction angle) TC = 126 °C 30 A IT(AV) Average on-state current (180 ° conduction angle) 19 A ITSM(1) Non repetitive surge peak on-state current tp = 8.3 ms Tj initial = 25 °C 330 A tp = 10 ms 300 VDRM / VRRM Repetitive off-state voltage (50-60 Hz) Tj = 150 °C 1200 V dl/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns f = 50 Hz Tj = 150 °C 200 A/µs IGM Peak forward gate current tp = 20 µs Tj = 150 °C 8 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W Tstg Storage junction temperature range -40 to +150 °C Tj Operating junction temperature -40 to +150 °C Notes: (1)ST recommend I²t value for fusing = 450 A²s for Tj = 25 °C and tP = 10 ms Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test Conditions Value Unit IGT VD = 12 V, RL = 33 Ω Min. 10 mA Max. 50 VGT VD = 12 V, RL = 33 Ω Max. 1.3 V VGD VD = 2/3 x VDRM, RL = 3.3 kΩ Tj = 150 °C Min. 0.2 V IH IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 60 A , VD = 2/3 x VDRM, IG = 100 mA, dIG/dt = 0.2 A/µs Typ. 1 µs dV/dt VD = 2/3 x VDRM, gate open Tj = 150 °C Min. 1000 V/µs tq IT = 20 A, dIT/dt = 10 A/µs, VR = 75 V, VD = 2/3 x VDRM, dVD/dt = 20 V/µs, tP = 100 µs Tj = 150 °C Typ. 150 µs VTM ITM = 60 A, tP = 380 µs Max. 1.65 V VTO Threshold voltage Tj = 150 °C Max. 0.88 V RD Dynamic resistance Tj = 150 °C Max. 14 mΩ IDRM/IRRM VD = VDRM, VR = VRRM Tj = 25 °C Max. 5 µA Tj = 125 °C Max. 3 mA Tj = 150 °C Max. 5 mA IDSM/IRSM VD = VDSM, VR = VRSM Tj = 25 °C Max. 10 µA |
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