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OPT202 Datasheet(PDF) 7 Page - Burr-Brown (TI)

[Old version datasheet] Texas Instruments acquired Burr-Brown Corporation.
Part # OPT202
Description  PHOTODIODE WITH ON-CHIP AMPLIFIER
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Manufacturer  BURR-BROWN [Burr-Brown (TI)]
Direct Link  http://www.burr-brown.com
Logo BURR-BROWN - Burr-Brown (TI)

OPT202 Datasheet(HTML) 7 Page - Burr-Brown (TI)

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®
OPT202
7
some degree, the OPT202 op amp circuitry is designed to
minimize this effect. Sensitive junctions are shielded with
metal, and differential stages are cross-coupled. Furthermore,
the photodiode area is very large relative to the op amp input
circuitry making these effects negligible.
If your light source is focused to a small area, be sure that
it is properly aimed to fall on the photodiode. If a narrowly
focused light source were to miss the photodiode area and
fall only on the op amp circuitry, the OPT202 would not
perform properly. The large (0.090 x 0.090 inch) photodiode
area allows easy positioning of narrowly focused light sources.
The photodiode area is easily visible—it appears very dark
compared to the surrounding active circuitry.
The incident angle of the light source also affects the
apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is simply due to the smaller
effective light gathering area of the photodiode (proportional
to the cosine of the angle). At a greater incident angle, light
is diffused by the side of the package. These effects are
shown in the typical performance curve “Response vs Incident
Angle.”
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required to operate the
OPT202. Applications with high-impedance power supplies
may require decoupling capacitors located close to the
device pins as shown. Output is zero volts with no light and
increases with increasing illumination.
Photodiode current, I
D, is proportional to the radiant power
or flux (in watts) falling on the photodiode. At a wavelength
of 650nm (visible red) the photodiode Responsivity, R
I, is
approximately 0.45A/W. Responsivity at other wavelengths
is shown in the typical performance curve “Responsivity vs
Wavelength.”
The typical performance curve “Output Voltage vs Radiant
Power” shows the response throughout a wide range of
radiant power. The response curve “Output Voltage vs
Irradiance” is based on the photodiode area of 5.23 x 10–6m2.
The OPT202’s voltage output is the product of the photodiode
current times the feedback resistor, (I
DRF). The internal
feedback resistor is laser trimmed to 1M
Ω ±2%. Using this
resistor, the output voltage responsivity, R
V, is approximately
0.45V/
µW at 650nm wavelength.
An external resistor can be connected to set a different
voltage responsivity. Best dynamic performance is achieved
by connecting REXT in series (for RF > 1MΩ), or in parallel
(for RF < 1MΩ), with the internal resistor as shown in
Figure 2. Placing the external resistor in parallel with the
internal resistor requires the DIP package. These connections
take advantage of on-chip capacitive guarding of the internal
resistor, which improves dynamic performance. For values
of R
F less than 1MΩ, an external capacitor, CEXT, should be
connected in parallel with RF (see Figure 2). This capacitor
eliminates gain peaking and prevents instability. The value
of CEXT can be read from the table in Figure 2.
LIGHT SOURCE POSITIONING
The OPT202 is 100% tested with a light source that uniformly
illuminates the full area of the integrated circuit, including
the op amp. Although all IC amplifiers are light-sensitive to
ID is proportional
to light intensity
(radiant power).
FIGURE 1. Basic Circuit Connections.
1M
(Pin available on DIP only)
OPT202
3pF
175
V
O
–15V
+15V
0.1µF 0.1µF
V
O = ID RF
R
F
I
D
I
D
(0V)
λ
FIGURE 2. Using External Feedback Resistor.
EQUIVALENT RF
CEXT
100M
(1)
10M
(1)
1M
(1)
330k
2pF
≤100kΩ
(2)
NOTES: (1) No CEXT required. (2)
Not recommended due to possible
op amp instability.
1M
OPT202
3pF
175
83
5
4
1
V
O = ID RF
Circuit Requires
DIP Package
V–
λ
V+
R
EXT
C
EXT
R
F = REXT || 1MΩ
For R
F < 1MΩ
1M
OPT202
175
V
O = ID RF
V–
λ
V+
R
F = REXT + 1MΩ
For R
F > 1MΩ
R
EXT
2


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