NCP511SN30T1 datasheet(3/12 Pages) ONSEMI

Part #	NCP511SN30T1

Description	150 mA CMOS Low Iq Low-Dropout Voltage Regulator

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP511

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ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Venable = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless

otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Output Voltage (TA = 25°C, Iout = 1.0 mA)

1.5 V

1.8 V

2.5 V

2.7 V

2.8 V

3.0 V

3.3 V

5.0 V

Vout

1.455

1.746

2.425

2.646

2.744

2.94

3.234

4.900

1.5

1.8

2.5

2.7

2.8

3.0

3.3

5.0

1.545

1.854

2.575

2.754

2.856

3.06

3.366

5.100

V

Output Voltage (TA = −40°C to 85°C, Iout = 1.0 mA)

1.5 V

1.8 V

2.5 V

2.7 V

2.8 V

3.0 V

3.3 V

5.0 V

Vout

1.455

1.746

2.425

2.619

2.716

2.910

3.201

4.900

1.5

1.8

2.5

2.7

2.8

3.0

3.3

5.0

1.545

1.854

2.575

2.781

2.884

3.09

3.399

5.100

V

Line Regulation (Iout = 10 mA)

1.5 V−4.4 V (Vin = Vout(nom.) + 1.0 V to 6.0 V)

4.5 V−5.0 V (Vin = 5.5 V to 6.0 V)

Regline

−

1.0

3.5

mV/V

Load Regulation (Iout = 1.0 mA to 150 mA)

Regload

−

0.3

0.8

mV/mA

Output Current (Vout = (Vout at Iout = 150 mA) −3%)

1.5 V−1.8 V (Vin = 4.0 V)

1.9 V−3.0 V (Vin = 5.0 V)

3.1 V−5.0 V (Vin = 6.0 V)

Iout(nom.)

150

−

mA

Dropout Voltage (Iout = 100 mA, Measured at Vout −3.0%)

1.5 V

1.8 V

2.5 V

2.7 V

2.8 V

3.0 V

3.3 V

5.0 V

Vin−Vout

−

245

160

110

100

90

75

350

200

mV

Quiescent Current

(Enable Input = 0 V)

(Enable Input = Vin, Iout = 1.0 mA to Io(nom.))

IQ

−

0.1

40

1.0

100

mA

Output Voltage Temperature Coefficient

TC

−

"100

−

ppm/

°C

Enable Input Threshold Voltage

(Voltage Increasing, Output Turns On, Logic High)

(Voltage Decreasing, Output Turns Off, Logic Low)

Vth(en)

1.3

−

0.3

V

Output Short Circuit Current (Vout = 0 V)

1.5 V−1.8 V (Vin = 4.0 V)

1.9 V−3.0 V (Vin = 5.0 V)

3.1 V−5.0 V (Vin = 6.0 V)

Iout(max)

200

400

800

mA

Ripple Rejection (f = 1.0 kHz, Io = 60 mA)

RR

−

50

−

dB

Output Noise Voltage (f = 20 Hz to 100 kHz, Iout = 60 mA)

Vn

−

110

−

mVrms

3. Maximum package power dissipation limits must be observed.

PD

+

TJ(max) *TA

R

qJA

4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

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