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NGD8201N Datasheet(PDF) 2 Page - ON Semiconductor |
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NGD8201N Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NGD8201N http://onsemi.com 2 UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C EAS 250 200 180 mJ Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) 2000 mJ THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) TL 275 °C 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 V IC = 10 mA TJ = −40°C to 175°C 390 415 440 Zero Gate Voltage Collector Current ICES VGE = 0 V, VCE = 15 V TJ = 25°C 0.1 1.0 mA VCE = 200 V, VGE = 0 V TJ = 25°C 0.5 1.5 10 mA TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA TJ = 25°C 30 35 39 V TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V TJ = 25°C 0.05 0.1 0.5 mA TJ = 175°C 1.0 5.0 10* TJ = −40°C 0.005 0.01 0.1 Gate−Emitter Clamp Voltage BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V Gate−Emitter Leakage Current IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA Gate Resistor (Optional) RG TJ = −40°C to 175°C 70 W Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* Threshold Temperature Coefficient (Negative) 4.0 4.6 5.2 mV/°C *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. |
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