NGD8201N datasheet(2/7 Pages) ONSEMI

Part #	NGD8201N

Description	Ignition IGBT

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Manufacturer	ONSEMI [ON Semiconductor]

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NGD8201N

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UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic

Symbol

Value

Unit

Single Pulse Collector−to−Emitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C

VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C

VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C

EAS

250

200

180

mJ

Reverse Avalanche Energy

VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C

EAS(R)

2000

mJ

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

RqJC

1.2

°C/W

Thermal Resistance, Junction−to−Ambient (Note 1)

RqJA

95

°C/W

Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)

TL

275

°C

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage

BVCES

IC = 2.0 mA

TJ = −40°C to 175°C

370

395

420

V

IC = 10 mA

TJ = −40°C to 175°C

390

415

440

Zero Gate Voltage Collector Current

ICES

VGE = 0 V, VCE = 15 V

TJ = 25°C

0.1

1.0

mA

VCE = 200 V,

VGE = 0 V

TJ = 25°C

0.5

1.5

10

mA

TJ = 175°C

1.0

25

100*

TJ = −40°C

0.4

0.8

5.0

Reverse Collector−Emitter Clamp

Voltage

BVCES(R)

IC = −75 mA

TJ = 25°C

30

35

39

V

TJ = 175°C

35

39

45*

TJ = −40°C

30

33

37

Reverse Collector−Emitter Leakage

Current

ICES(R)

VCE = −24 V

TJ = 25°C

0.05

0.1

0.5

mA

TJ = 175°C

1.0

5.0

10*

TJ = −40°C

0.005

0.01

0.1

Gate−Emitter Clamp Voltage

BVGES

IG = "5.0 mA

TJ = −40°C to 175°C

12

12.5

14

V

Gate−Emitter Leakage Current

IGES

VGE = "5.0 V

TJ = −40°C to 175°C

200

300

350*

mA

Gate Resistor (Optional)

RG

TJ = −40°C to 175°C

70

W

Gate−Emitter Resistor

RGE

TJ = −40°C to 175°C 14.25

16

25

kW

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGE(th)

IC = 1.0 mA, VGE = VCE

TJ = 25°C

1.5

1.8

2.1

V

TJ = 175°C

0.7

1.0

1.3

TJ = −40°C

1.7

2.0

2.3*

Threshold Temperature Coefficient

(Negative)

4.0

4.6

5.2

mV/°C

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

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