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ILQ1615-1 Datasheet(PDF) 4 Page - Vishay Siliconix |
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ILQ1615-1 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83652 4 Rev. 1.6, 04-Mar-11 ILD615, ILQ615 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Note • According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio (collector emitter saturated) IF = 10 mA, VCE = 0.4 V ILD615-1 CTRCEsat 25 % ILQ615-1 ILD615-2 CTRCEsat 40 % ILQ615-2 ILD615-3 CTRCEsat 60 % ILQ615-3 ILD615-4 CTRCEsat 100 % ILQ615-4 Current transfer ratio (collector emitter) IF = 1 mA, VCE = 5 V ILD615-1 CTRCE 13 30 % ILQ615-1 ILD615-2 CTRCE 22 45 % ILQ615-2 ILD615-3 CTRCE 34 70 % ILQ615-3 ILD615-4 CTRCE 56 90 % ILQ615-4 IF = 10 mA, VCE = 5 V ILD615-1 CTRCE 40 60 80 % ILQ615-1 ILD615-2 CTRCE 63 80 125 % ILQ615-2 ILD615-3 CTRCE 100 150 200 % ILQ615-3 ILD615-4 CTRCE 160 200 320 % ILQ615-4 SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 1.669 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 10 kV Vpd 1.424 kV Insulation resistance VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb 175 °C (construction test only) RIO 109 Forward current ISI 275 mA Power dissipation PSO 400 mW Rated impulse voltage VIOTM 10 kV Safety temperature TSI 175 °C |
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