Optocoupler, Phototransistor Output,

Low Input Current, with Base Connection

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83616

324

Rev. 1.9, 08-May-08

IL215AT/216AT/217AT

Vishay Semiconductors

DESCRIPTION

The IL215AT/IL216AT/IL217AT are optically coupled pairs

with a Gallium Arsenide infrared LED and a silicon NPN

phototransistor. Signal information, including a DC level, can

be transmitted by the device while maintaining a high degree

of electrical isolation between input and output. The

IL215AT/IL216AT/IL217AT comes in a standard SOIC-8

small outline package for surface mounting which makes it

ideally suited for high density applications with limited space.

In addition to eliminating through hole requirements, this

package conforms to standards for surface mounted

devices.

The high CTR at low input current is designed for low power

consumption requirements such as CMOS microprocessor

interfaces.

FEATURES

• High current transfer ratio

• Industry standard SOIC-8 surface mountable

package

• Compatible with dual wave, vapor phase and

IR reflow soldering

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and

WEEE 2002/96/EC

AGENCY APPROVALS

• UL1577, file no. E52744 system code Y

• CUL - file no. E52744, equivalent to CSA bulletin 5A

• DIN EN 60747-5-5 available with option 1

i179002

1

2

3

4

A

K

NC

NC

8

7

6

5

NC

B

C

E

ORDER INFORMATION

PART

REMARKS

IL215AT

CTR > 20 %, SOIC-8

IL216AT

CTR > 50 %, SOIC-8

IL217AT

CTR > 100 %, SOIC-8

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Peak reverse voltage

6.0

V

Forward continuous current

60

mA

Power dissipation

90

mW

Derate linearly from 25 °C

1.2

mW/°C

OUTPUT

Collector emitter breakdown voltage

30

V

Emitter collector breakdown voltage

7.0

V

Collector base breakdown voltage

70

V

50

mA

t < 1.0 ms

100

mA

Power dissipation

150

mW

Derate linearly from 25 °C

2.0

mW/°C