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MJW21196 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MJW21196
Description  Silicon Power Transistors
Download  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJW21196 Datasheet(HTML) 2 Page - ON Semiconductor

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MJW21195 (PNP) MJW21196 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
VCEO(sus)
250
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ICEO
100
µAdc
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
IEBO
50
µAdc
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
50
µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
20
8
80
Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
2.0
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
1.0
3
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
THD
0.8
0.08
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
500
pF
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW21195
NPN MJW21196
IC, COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
2.5
2.0
1.0
10
0.1
7.5
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
0.1
1.0
VCE = 10 V
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
TJ = 25°C
ftest = 1 MHz
3.5
3.0
6.5
5.5
4.5
3.5
2.5
1.5
VCE = 5 V
VCE = 5 V


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