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SN74LVC1G07-EP Datasheet(PDF) 3 Page - Texas Instruments

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Part # SN74LVC1G07-EP
Description  Single Buffer/Driver With Open-Drain Output
Download  21 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

SN74LVC1G07-EP Datasheet(HTML) 3 Page - Texas Instruments

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2
5
3
4
Y
1
A
GND
N.C.
V
CC
3
SN74LVC1G07-Q1
www.ti.com
SCES826A – MARCH 2011 – REVISED FEBRUARY 2017
Product Folder Links: SN74LVC1G07-Q1
Submit Documentation Feedback
Copyright © 2011–2017, Texas Instruments Incorporated
5 Pin Configuration and Functions
DBV or DCK Package
5-Pin SOT-23 or SC70
Top View
N.C. – No internal connection
See mechanical drawings for dimensions.
Pin Functions
PIN
I/O
DESCRIPTION
NO.
SOT-23, SC70
1
N.C.
Not connected
2
A
I
Input
3
GND
P
Ground
4
Y
O
Output
5
VCC
P
Power Pin
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
(3)
The value of VCC is provided in the recommended operating conditions table.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Supply voltage
–0.5
6.5
V
VI
Input voltage(2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high or low state (2)(3)
–0.5
6.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
Continuous current through VCC or GND
±100
mA
TJ
Operating junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011
±1000


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