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SN74LVC1G07-EP Datasheet(PDF) 3 Page - Texas Instruments |
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SN74LVC1G07-EP Datasheet(HTML) 3 Page - Texas Instruments |
3 / 21 page 2 5 3 4 Y 1 A GND N.C. V CC 3 SN74LVC1G07-Q1 www.ti.com SCES826A – MARCH 2011 – REVISED FEBRUARY 2017 Product Folder Links: SN74LVC1G07-Q1 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated 5 Pin Configuration and Functions DBV or DCK Package 5-Pin SOT-23 or SC70 Top View N.C. – No internal connection See mechanical drawings for dimensions. Pin Functions PIN I/O DESCRIPTION NO. SOT-23, SC70 1 N.C. — Not connected 2 A I Input 3 GND P Ground 4 Y O Output 5 VCC P Power Pin (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. (3) The value of VCC is provided in the recommended operating conditions table. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage –0.5 6.5 V VI Input voltage(2) –0.5 6.5 V VO Voltage range applied to any output in the high-impedance or power-off state (2) –0.5 6.5 V VO Voltage range applied to any output in the high or low state (2)(3) –0.5 6.5 V IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA Continuous current through VCC or GND ±100 mA TJ Operating junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 ±1000 |
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