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BQ24105RHLR Datasheet(PDF) 6 Page - Texas Instruments |
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BQ24105RHLR Datasheet(HTML) 6 Page - Texas Instruments |
6 / 45 page bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Pin Functions (continued) PIN bq24100, bq24103, I/O DESCRIPTION bq24113, NAME bq24108, bq24103A bq24105 bq24115 bq24113A bq24109 bq24104 Charge status 2 (open-drain output). When the transistor turns on STAT2 19 19 19 O indicates charge is done. When it is off and with the condition of STAT1 indicates various charger conditions (See Table 1) Temperature sense input. This input monitors its voltage against an internal threshold to determine if charging is allowed. Use an NTC TS 12 12 12 12 12 I thermistor and a voltage divider powered from VTSB to develop this voltage. (See Figure 4) Timer and termination control. Connect a capacitor from this node to GND TTC 7 7 7 I to set the bqSWITCHER™ timer. When this input is low, the timer and termination detection are disabled. VCC 6 6 6 6 6 I Analog device input. A 0.1 μF capacitor to VSS is required. VSS 10 10 10 10 10 Analog ground input TS internal bias regulator voltage. Connect capacitor (with a value VTSB 11 11 11 11 11 O between a 0.1- μF and 1-μF) between this output and VSS. There is an internal electrical connection between the exposed thermal pad and VSS. The exposed thermal pad must be connected to the same Exposed potential as the VSS pin on the printed circuit board. The power pad can Thermal Pad Pad Pad Pad Pad be used as a star ground connection between VSS and PGND. A common Pad ground plane may be used. VSS pin must be connected to ground at all times. 7 Specifications 7.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply voltage (with respect to IN, VCC 20 V VSS) STAT1, STAT2, PG, CE, CELLS, SNS, BAT –0.3 20 V OUT –0.7 20 V Input voltage (with respect to CMODE, TS, TTC 7 V VSS and PGND) VTSB 3.6 V ISET1, ISET2 3.3 V Voltage difference between SNS and BAT inputs (VSNS – VBAT) ±1 V Output sink STAT1, STAT2, PG 10 mA Output current (average) OUT 2.2 A Operating free-air temperature, TA –40 85 °C Junction temperature, TJ –40 125 °C Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds 300 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101 ±500 (2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 |
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