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BQ2022ALPR Datasheet(PDF) 5 Page - Texas Instruments |
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BQ2022ALPR Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 37 page  5 bq2022A www.ti.com SLUS724E – SEPTEMBER 2006 – REVISED MARCH 2016 Product Folder Links: bq2022A Submit Documentation Feedback Copyright © 2006–2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) bq2022A UNIT DBZ (3 PINS) LP (3 PINS) RθJA Junction-to-ambient thermal resistance 244.3 158.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 104.9 55.6 RθJB Junction-to-board thermal resistance 93.1 n/a ψJT Junction-to-top characterization parameter 4.8 26.8 ψJB Junction-to-board characterization parameter 66.4 137.8 RθJC(bot) Junction-to-case (bottom) thermal resistance n/a n/a 6.5 Electrical Characteristics: DC TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDATA Supply current VPU = 5.5 V 20 μA VOL Low-level output voltage Logic 0, VPU = 5.5 V, IOL = 4 mA, SDQ pin 0.4 V Logic 0, VPU = 2.65 V, IOL = 2 mA 0.4 VOH High-level output voltage Logic 1 VPU 5.5 IOL Low-level output current (sink) VOL = 0.4 V, SDQ pin 4 mA VIL Low-level input voltage Logic 0 0.8 V VIH High-level input voltage Logic 1 2.2 V VPP Programming voltage 11.5 12 V (1) 5-k Ω series resistor between SDQ pin and VPU. (See Figure 18.) (2) tWDH must be less than tc to account for recovery. 6.6 Switching Characteristics: AC TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS PARAMETER TEST CONDITIONS MIN MAX UNIT tc Bit cycle time (1) 60 120 μs tWSTRB Write start cycle (1) 1 15 μs tWDSU Write data setup (1) tWSTRB 15 μs tWDH Write data hold (1) (2) 60 tc μs trec Recovery time (1) 1 μs For memory command only 5 tRSTRB Read start cycle (1) 1 13 μs tODD Output data delay (1) tRSTRB 13 μs tODHO Output data hold (1) 17 60 μs tRST Reset time (1) 480 μs tPPD Presence pulse delay (1) 15 60 μs tPP Presence pulse (1) 60 240 μs tEPROG EPROM programming time 2500 μs tPSU Program setup time 5 μs tPREC Program recovery time 5 μs tPRE Program rising-edge time 5 μs tPFE Program falling-edge time 5 μs tRSTREC 480 μs |
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