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MMBT3906 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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MMBT3906 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification PNP General Purpose Transistor MMBT3906 C062 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = -30 V - -50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V - -50 nA hFE DC current gain VCE = -1V; IC= -0.1mA IC = -1mA IC = -10mA IC = -50mA IC = -100mA 60 80 100 60 30 - - 300 - - IC = -10mA; IB = 1mA - -200 mV VCEsat collector-emitter saturation voltage IC = -50mA; IB = -5mA - -300 mV IC = -10mA; IB = -1mA - -850 mV VBEsat base-emitter saturation voltage IC = -50mA; IB = -5mA - -950 mV Cc collector capacitance IE = Ie= 0; VCB = -5 V; f = 1 MHz - 4.5 pF Ce emitter capacitance IC = Ic= 0; VEB = -500 mV; f = 1 MHz - 10 pF fT transition frequency IC = -10mA; VCE = -20 V; f = 100MHz 250 - MHz NF noise figure IC = -100μA; VCE = -5V; RS = 1 kΩ;f = 10Hz to15.7 kHz - 4 dB Switching times (between 10% and 90% levels); ton Turn-on time - 65 ns td delay time - 35 ns tr rise time - 35 ns toff turn-off time - 300 ns ts storage time - 225 ns tr fall time ICon= -10mA; IBon = -1mA; IBoff= -1mA - 75 ns Note Pulse test: tp≤300 ms; d≤0.02. |
Similar Part No. - MMBT3906_13 |
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Similar Description - MMBT3906_13 |
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