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MMBT3906 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # MMBT3906
Description  PNP General Purpose Transistor
Download  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

MMBT3906 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
PNP General Purpose Transistor
MMBT3906
C062
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = -30 V
-
-50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
-
-50
nA
hFE
DC current gain
VCE = -1V;
IC= -0.1mA
IC = -1mA
IC = -10mA
IC = -50mA
IC = -100mA
60
80
100
60
30
-
-
300
-
-
IC = -10mA; IB = 1mA
-
-200
mV
VCEsat
collector-emitter saturation
voltage
IC = -50mA; IB = -5mA
-
-300
mV
IC = -10mA; IB = -1mA
-
-850
mV
VBEsat
base-emitter saturation
voltage
IC = -50mA; IB = -5mA
-
-950
mV
Cc
collector capacitance
IE = Ie= 0; VCB = -5 V;
f = 1 MHz
-
4.5
pF
Ce
emitter capacitance
IC = Ic= 0; VEB = -500 mV;
f = 1 MHz
-
10
pF
fT
transition frequency
IC = -10mA; VCE = -20 V;
f = 100MHz
250
-
MHz
NF
noise figure
IC = -100μA; VCE = -5V;
RS = 1 kΩ;f = 10Hz to15.7 kHz
-
4
dB
Switching times (between 10% and 90% levels);
ton
Turn-on time
-
65
ns
td
delay time
-
35
ns
tr
rise time
-
35
ns
toff
turn-off time
-
300
ns
ts
storage time
-
225
ns
tr
fall time
ICon= -10mA; IBon = -1mA;
IBoff= -1mA
-
75
ns
Note
Pulse test: tp≤300 ms; d≤0.02.


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