Electronic Components Datasheet Search |
|
MMBT3906 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
|
MMBT3906 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Production specification PNP General Purpose Transistor MMBT3906 C062 www.gmicroelec.com Rev.A 1 FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT3904). Collector Current Capability ICM =-200mA. Low Voltage(Max:-40V). APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3906 2A SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS Value UNIT VCBO collector-base voltage open emitter -40 V VCEO collector-emitter voltage open base -40 V VEBO emitter-base voltage open collector -6 V IC collector current (DC) -100 mA ICM peak collector current -200 mA IBM peak base current -100 mA Ptot total power dissipation Tamb≤25°C 250 mW Tstg storage temperature -65 to +150 °C Tj junction temperature 150 °C Tamb operating ambient temperature -65 to +150 °C Note Transistor mounted on an FR4 printed-circuit board. Pb Lead-free |
Similar Part No. - MMBT3906_13 |
|
Similar Description - MMBT3906_13 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |