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MMBT2369 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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MMBT2369 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page  Production specification NPN General Purpose Amplifier MMBT2369 C114 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 4.5 V Collector cut-off current ICBO VCB=20V IE=0 0.4 μA VCE=1.0V IC=10mA 40 120 DC current gain hFE VCE=2.0V IC=100mA 20 Collector-emitter saturation voltage VCE(sat) IC=10mA IB=1.0mA 0.25 V Output capacitance Cobo VCE=5.0V,IE=0,f=1.0MHz 4.0 pF Small signal current gain hfe IC=10mA,VCE=10V, f=100MHz 5.0 Storage Time ts IB1=IB2=IC=10mA 13 ns Turn-on time ton VCC=3V, IC=10mA, IB1=3mA 12 ns Turn-off time toff VCC=3V, IC=10mA, IB1=3mA IB2=1.5mA 18 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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Similar Description - MMBT2369 |
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