IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXSX 35N120BD1

IXSX 35N120BD1

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

I

16

23

S

Pulse test, t £ 300 ms, duty cycle £ 2 %

C

ies

3600

pF

C

oes

V

315

pF

C

res

75

pF

Q

g

120

nC

Q

ge

I

33

nC

Q

gc

49

nC

t

d(on)

36

ns

t

ri

27

ns

t

d(off)

160

300 ns

t

fi

180

300 ns

E

off

59 mJ

t

d(on)

38

ns

t

ri

29

ns

E

on

6mJ

t

d(off)

240

ns

t

fi

340

ns

E

off

9mJ

R

thJC

0.42 K/W

R

thCK

0.15

K/W

Inductive load, T

I

V

Switching times may increase for V

CE

(Clamp) > 0.8 • V

increased R

G

ReverseDiode(FRED)

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

V

F

I

2.75

V

t £ 300 ms, duty cycle d £ 2 %, T

1.85

V

I

RM

I

7

14.3

A

t

rr

V

I

40

ns

R

thJC

0.65 K/W

Inductive load, T

I

V

Switching times may increase for V

CE

(Clamp) > 0.8 • V

increased R

G

TO-247 HOLE-LESS Outline

TO-264 AA Outline