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MMDT3906 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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MMDT3906 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 4 page  Production specification Dual PNP Small Signal Surface Mount Transistor MMDT3906 G003 www.gmicroelec.com Rev.A 1 FEATURES Epitaxial planar die construction. Ideal for low power amplification and switching. Ultra-small surface mount package. Also available in lead free version. APPLICATIONS SOT-363 General switching and amplification. ORDERING INFORMATION Type No. Marking Package Code MMDT3906 K3N SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER VALUE UNIT VCBO collector-base voltage -40 V VCEO collector-emitter voltage -40 V VEBO emitter-base voltage -5 V IC collector current -continuous -0.2 A Ptot total power dissipation -0.2 W RθJA Thermal resistance, junction to ambient 625 °C/W Tstg storage temperature 150 °C Tj junction temperature -55 to +150 °C Pb Lead-free |
Similar Part No. - MMDT3906_13 |
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Similar Description - MMDT3906_13 |
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