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F60SA60DS Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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F60SA60DS Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 3 page ® F60SA60DS Pb Free Plating Product F60SA60DS 16.0 Ampere Insulated Stealth Dual Series Connection Fast Recovery Rectifiers Pb Features Low forward voltage drop High current capability Case: Fully Isolated Molding TO-220FP High surge current capability Weight: 2.0 gram approximately Polarity: As marked on diode body method 208 Mounting position: Any Terminals: Solderable per MIL-STD-202 Mechanical Data Low reverse leakage current Epoxy: UL 94V-0 rate flame retardant ITO-220AB Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems Latest FRED technology with soft recovery characteristics Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "DP" Suffix "DD" Suffix "DS" Suffix "DN" © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3 Rev.07 .189(4.8) .406(10.3) .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .134(3.4) .165(4.2) .381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .118(3.0) Unit : inch (mm) ABSOLUTE MAXIMUM RATINGS TC ELECTRICAL CHARACTERISTICS T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 600 V V Maximum Repetitive Reverse Voltage RRM 600 V I Average Forward Current F(AV) TC 8 =110°C, Per Diode A TC 16 =110°C, Per Package A I RMS Forward Current F(RMS) TC 12 =110°C, Per Diode A I Non-Repetitive Surge Forward Current FSM TJ 100 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 50 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended(M3) 1.1 N·m R Thermal Resistance θJC Junction-to-Case 2.5 °C /W Weight 2.1 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM VR -- =600V -- 15 µA VR=600V, TJ -- =125°C -- 250 µA V Forward Voltage F IF -- =8A 1.8 2.4 V IF=8A, TJ -- =125°C 1.4 -- V t Reverse Recovery Time rr IF=1A, VR=30V, diF -- /dt=-2 00A/μs 17 -- ns t Reverse Recovery Time rr VR=300V, IF=8A diF/dt=-2 00A/μs, TJ -- =25°C 30 -- ns I Max. Reverse Recovery Current RRM -- 2.3 -- A t Reverse Recovery Time rr VR=300V, IF=8A diF/dt=-2 00A/μs, TJ -- =125°C 60 -- ns I Max. Reverse Recovery Current RRM -- 4.8 -- A |
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