2SC4374 datasheet(2/3 Pages) BILIN

Part #	2SC4374

Description	NPN Silicon Epitaxial Planar Transistor

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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Production specification

NPN Silicon Epitaxial Planar Transistor

2SC4374

E121

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

80

V

Collector- emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

80

V

Emitter- base breakdown voltage

V(BR)EBO

IE=1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB=80V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

VCE=2V,IC=50mA

70

240

DC current gain

hFE

VCE=2V,IC=200mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=200mA,IB=20mA

0.4

V

Base-emitter

VBE

VCE=-2V,IC=5mA

0.55

0.8

V

Transition frequency

fT

VCE=10V, IC=10mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

14

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

70-140

120-240

Marking

EO

EY

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