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2SC4374 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4374 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification NPN Silicon Epitaxial Planar Transistor 2SC4374 E121 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V Collector- emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 80 V Emitter- base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=80V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA VCE=2V,IC=50mA 70 240 DC current gain hFE VCE=2V,IC=200mA 40 Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=20mA 0.4 V Base-emitter VBE VCE=-2V,IC=5mA 0.55 0.8 V Transition frequency fT VCE=10V, IC=10mA 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 14 pF CLASSIFICATION OF hFE Rank O Y Range 70-140 120-240 Marking EO EY |
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