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RFUH10TB4S Datasheet(PDF) 1 Page - Rohm |
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RFUH10TB4S Datasheet(HTML) 1 Page - Rohm |
1 / 8 page Data Sheet Super Fast Recovery Diode RFUH10TB4S zSerise zDimensions(Unit : mm) zStructure Super Fast Recovery zApplications General rectification zFeatures 1)Ultra low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type zAbsolute Maximum Ratings(Tc=25°C) Symbol Unit VRM V VR V Io A IFSM A Tj °C Tstg °C zElectrical Characteristics(Tj=25°C) Symbol Unit Forward voltage VF V Reverse current IR μA Reverse recovery time trr ns Thermal resistance Rth(j-c) °C/W Parameter Conditions Limits Repetitive peak reverse voltage Duty 0.5 430 Reverse voltage Direct voltage 430 Average rectified foward current 60Hz half sin wave , Resistive load Tc=90°C 10 Forward current surge peak 60Hz half sin wave , Non-repetitive at Tj=25°C 80 Junction temperature 150 Storage temperature 55 to 150 Parameter Conditions Min. Typ. Max. IF=10A 1.4 1.7 VR=430V 0.05 10 IF=0.5A,IR=1A,Irr=0.25×IR 15 25 Junction to case 3.0 Manufacture Year Week ROHM : TO220FN FUH10T B4S 2.54 0.5 2.54 0.5 1/4 2012.06 - Rev.A |
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