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BSR41 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BSR41 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page  Production specification NPN medium power Transistors BSR40/BSR41/BSR42/BSR43 E072 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT VCB=60V IE=0 100 nA Collector cut-off current ICBO VCB=60V IE=0,TA=150℃ 50 μA Emitter-base cut-off current IEBO VCE=5V IC=0A 100 nA VCE=5V IC=100uA BSR40;BSR42 BSR41;BSR43 10 30 VCE=5V IC=100mA BSR40;BSR42 BSR41;BSR43 40 100 120 300 DC current gain hFE VCE=5V IC=500mA BSR40;BSR42 BSR41;BSR43 30 50 Collector-emitter saturation voltage VCE(sat) IC=150mA IB=15mA IC=500mA IB=50mA 0.25 0.5 V Base-emitter saturation voltage VBE(sat) IC=150mA IB=15mA IC=500mA IB=50mA 1 1.2 V Collector capacitance Cc IE=ie=0A,VCB=10V f=1MHz 12 pF Emitter capacitance Ce IC=ic=0A,VEB=0.5V f=1MHz 90 pF Transition frequency fT VCE=10V, IC=50mA, f=100MHz 100 MHz Turn-on time ton 250 ns Turn-off time ton ICon=100mA;IBon=5mA;IBoff=-5mA 1 us |
Similar Part No. - BSR41 |
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Similar Description - BSR41 |
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