BV

R

DS(on) typ

I

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 38 nC (Typ.)

Extended Safe Operating Area

Lower R

100% Avalanche Tested

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HFW12N65S

650V N-Channel MOSFET

July 2016

1.Gate 2. Drain 3. Source

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

650

V

I

D

Drain Current

– Continuous (T

)

12

A

Drain Current

– Continuous (T

)

7.4

A

I

DM

Drain Current

– Pulsed

(Note 1)

48

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

860

mJ

I

AR

Avalanche Current

(Note 1)

12

A

E

AR

Repetitive Avalanche Energy

(Note 1)

22.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

) *

3.13

W

Power Dissipation (T

)

- Derate above 25

225

W

1.78

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

0.56

/W

R

JA

Junction-to-Ambient*

--

40

R

JA

Junction-to-Ambient

--

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

G

S

D