Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

On Characteristics

V

GS

Gate Threshold Voltage

V

2.0

--

4.0

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

2.0

2.5

g

FS

Forward Transconductance

V

--

3

--

S

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

650

--

--

V

I

DSS

Zero Gate Voltage Drain Current

V

--

--

10

V

--

--

100

I

GSS

Gate-Body Leakage Current

V

30 V, V

--

--

100

nA

Dynamic Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

560

730

pF

C

oss

Output Capacitance

--

70

90

pF

C

rss

Reverse Transfer Capacitance

--

14

18.5

pF

Switching Characteristics

t

d(on)

Turn-On Time

V

R

(Note 4,5)

--

19

48

ns

t

r

Turn-On Rise Time

--

19

48

ns

t

d(off)

Turn-Off Delay Time

--

35

80

ns

t

f

Turn-Off Fall Time

--

22

54

ns

Q

g

Total Gate Charge

V

V

(Note 4,5)

--

12.5

16.5

nC

Q

gs

Gate-Source Charge

--

2.8

--

nC

Q

gd

Gate-Drain Charge

--

4.0

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current

--

--

5

A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

20

V

SD

Drain-Source Diode Forward Voltage

V

--

--

1.4

V

trr

Reverse Recovery Time

V

di

F

--

250

--

ns

Qrr

Reverse Recovery Charge

--

1.6

--

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=8mH, I

, Starting T

3. I

SD

DD

C

4. Pulse Test : Pulse Width

5. Essentially Independent of Operating Temperature

unless otherwise specified