unless otherwise specified

HFH9N90Z / HFA9N90Z

900V N-Channel MOSFET

Oct 2016

Parameter

Value

Unit

900

V

9A

1.12

55

nC

Key Parameters

Features

* Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

100% Avalanche Tested

RoHS Compliant

Built-in ESD Diode

Symbol

Parameter

TO-3P

TO-247

Unit

V

DSS

Drain-Source Voltage

900

V

I

D

Drain Current

– Continuous (T

)

9.0

9.0 *

A

Drain Current

– Continuous (T

)

5.7

5.7 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

36

36 *

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

900

mJ

I

AR

Avalanche Current

(Note 1)

9.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

28

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.0

V/ns

P

D

Power Dissipation (T

)

- Derate above 25

280

110

W

2.22

0.88

W/

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K

4

KV

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Symbol

Parameter

TO-3P

TO-247

Unit

R

JC

Thermal Resistance, Junction-to-Case, Max.

0.45

1.11

/W

R

CS

Thermal Resistance, Case-to-Sink, Typ.

0.24

--

/W

R

JA

Thermal Resistance, Junction-to-Ambient, Max.

40

40

/W

HFH9N90Z

TO-3P

HFA9N90Z

TO-247

Symbol

G

D

S

G

D

S