Philips Semiconductors

BUK7240-100A

TrenchMOS™ standard level FET

Product specification

Rev. 01 — 03 October 2000

3 of 13

9397 750 07572

© Philips Electronics N.V. 2000. All rights reserved.

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa16

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

200

P

der

T

mb

(

o

C)

(%)

03aa24

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

200

I

der

(%)

T

mb

(

o

C)

P

der

P

tot

P

tot 25 C

°

()

----------------------

100%

×

=

I

der

I

D

I

D25 C

°

()

-------------------

100%

×

=

03na59

1

10

100

1000

1

10

100

1000

VDS (V)

ID(A)

D.C.

100 ms

10 ms

RDSon = VDS/ ID

1 ms

tp = 10 us

100 us

tp

tp

T

P

t

T