1

Rev. 4156F–AERO–06/04

Features

– 15 ns (Preview) for 3.3V biased only (AT60142E)

– 17 ns and 20 ns for 5V Tolerant (AT60142ET)

– Active: 810 mW (Max) @ 15 ns

– Standby: 215 µW (Typ)

°C

Description

The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8

bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an

extremely low standby supply current (Typical value = 65

µA) with a fast access time

at 15 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15

specification.

The ET

ns specification.

The AT60142E/ET are processed according to the methods of the latest revision of

the MIL PRF 38535 or ESA SCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Note:

1. Preliminary: contact factory for availability.

Rad Hard

512K x 8

Very Low Power

CMOS SRAM

AT60142E

AT60142ET