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AN80M49RSP Datasheet(PDF) 9 Page - Panasonic Semiconductor |
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AN80M49RSP Datasheet(HTML) 9 Page - Panasonic Semiconductor |
9 / 29 page AN80MxxRSP Series 9 SFF00009CEB Parameter Symbol Conditions Min Typ Max Unit Output voltage VOUT VIN = 3.5 V, IOUT = 250 mA 2.425 2.5 2.575 V Line regulation REGIN VIN = 3.5 V → 14.0 V, IOUT = 250 mA 25 mV Load regulation REGLOA VIN = 3.5 V, IOUT = 0 mA → 500 mA 50 mV Peak output current IPEAK VIN = 3.5 V, The output current value 600 900 mA when VOUT decreases by 5% from its value at IOUT = 250 mA. Bias current under no load IBIAS VIN = 3.5 V, IOUT = 0 mA 1.1 3.0 mA Bias current fluctuation to input ∆I BIAS(IN) VIN = 3.5 V → 14.0 V, IOUT = 250 mA −5 5mA Bias current fluctuation to load ∆I BIAS(LOA) VIN = 3.5 V, IOUT = 0 mA → 500 mA 25 mA Standby consumption current ISTB VIN = 14.0 V, VCONT = 0 V 3.0 µA Bias current before starting regulation IRUSH VIN = 2.375 V, IOUT = 0 A 5mA Control terminal current ICONT VIN = 3.5 V, IOUT = 250 mA 30 µA VCONT = 1.8 V Ripple rejection ratio 1 RR1 VIN = 4.5 V±1 V, f = 120 Hz 56.0 dB IOUT = 100 mA Minimum input/ VDIF(min)1 VIN = 2.6 V, IOUT = 250 mA 0.25 0.45 V output voltage difference 1 Minimum input/ VDIF(min)2 VIN = 2.7 V, IOUT = 500 mA 0.8 V output voltage difference 2 Control terminal threshold high voltage VCONTH VIN = 3.5 V 1.45 1.80 V Control terminal threshold low voltage VCONTL VIN = 3.5 V 0.50 0.70 V Parameter Symbol Conditions Min Typ Max Unit Ripple rejection ratio 2 RR2 VIN = 4.5 V±1 V, f = 500 kHz 30 dB IOUT = 100 mA Output noise voltage VNO 10 Hz ≤ f ≤ 100 kHz, I OUT = 100 mA 40 µV[rms] VIN = 3.5 V, CNR = 1 µF Output voltage temperature dVOUT VIN = 3.5 V, IOUT = 5 mA ±40 ppm/°C coefficient dTa −30°C ≤ T a ≤ +125°C Output short-circuit current IOSHORT VIN = 14.0 V, VOUT = GND 300 mA Overheat protection operating TjTH VIN = 3.5 V, IOUT = 5 mA 150 °C temperature I Electrical Characteristics at Ta = 25°C (continued) • AN80M25RSP (2.5 V type) Unless otherwise specially provided, shorten each test time (within 10 ms) so that the test is conducted under the condition that the drift due to the temperature increase in the chip junction part can be neglected. CIN = 3.3 µF, CNR = Open, COUT = 33 µF • Design reference data Note) The following values are typical and not guaranteed values. |
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