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SI4621DY Datasheet(PDF) 6 Page - Vishay Siliconix |
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SI4621DY Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com 6 Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 Vishay Siliconix Si4621DY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating 0 1 2 3 4 25 50 75 100 125 150 T C - Case Temperature (°C) |
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