SI4621DY datasheet(6/10 Pages) VISHAY

Part #	SI4621DY

Description	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73855

S11-1648-Rev. D, 15-Aug-11

Vishay Siliconix

Si4621DY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

4

6

8

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating

0

1

2

3

4

25

50

75

100

125

150

T

C - Case Temperature (°C)

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