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Document Number: 70645

S09-0705-Rev. E, 27-Apr-09

Vishay Siliconix

Si4480DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Source-Drain Diode Forward Voltage

Threshold Voltage

40

10

1

0

0.2

0.4

0.6

0.8

1.0

1.2

- 1.5

- 1.0

- 0.5

0.0

0.5

1.0

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.01

0.02

0.03

0.04

0.05

0.06

4

567

89

10

Time (s)

0

10

20

30

40

50

0.01

0.10

1.00

10.00

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (s)

2

1

0.1

0.01

110

30

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1. Duty Cycle, D =

Notes:

4. Surface Mounted