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SiHFPS30N60K Datasheet(PDF) 4 Page - Vishay Siliconix |
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SiHFPS30N60K Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91256 4 S09-0007-Rev. B, 19-Jan-09 IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 1000000 Coss Crss Ciss VGS = 0V, f = 1 MHZ C iss = Cgs + Cgd , C ds SHORTED Crss = Cgd Coss = Cds + Cgd 040 80 120 160 200 240 Q G Total Gate Charge (nC) 0 4 8 12 16 20 VDS= 480V VDS= 300V VDS= 120V ID= 30A 0.20.4 0.60.8 1.01.2 1.4 VSD, Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 TJ = 25°C TJ = 150°C VGS = 0V 1 10 100 1000 10000 VDS ,Drain-toSource Voltage (V) 0.1 1 10 100 1000 Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec |
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