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MMBTA05 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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MMBTA05 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 5 page Production specification NPN General Purpose Transistor MMBTA05/MMBTA06 C119 www.gmicroelec.com Rev.B 1 FEATURES High breakdown voltage. Complementary PNP type available (MMBTA55/MMBTA56). Low collector-emitter saturation voltage. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBTA05 1H SOT-23 MMBTA06 1GM SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage MMBTA05 MMBTA06 60 80 V VCEO collector-emitter voltage MMBTA05 MMBTA06 60 80 V VEBO emitter-base voltage 4 V IC collector current (DC) 0.5 A PC Collector dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient 357 °C/W Tj ,Tstg junction and storage temperature -55 to +150 °C Pb Lead-free |
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Similar Description - MMBTA05 |
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