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SIE804DF Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIE804DF Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 69091 S09-0143-Rev. A, 02-Feb-09 www.vishay.com 3 Vishay Siliconix SiE804DF New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 2.0 VGS =10thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0 5 10 15 20 25 VGS =6 V VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 020 40 60 80 ID =7.6 A VDS =120 V VDS =75 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 012 3 4 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 1000 2000 3000 4000 5000 020 40 60 80100 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.4 0.8 1.2 1.6 2.0 2.4 - 50 - 25 0 25 50 75 100 125 150 VGS =6 V;10 V ID =7.6 A TJ -Junction Temperature (°C) |
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