2SC5594 datasheet(2/8 Pages) HITACHI

Part #	2SC5594

Description	Silicon NPN Epitaxial High Frequency Low Noise Amplifier

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SC5594

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

12

V

Collector to emitter voltage

V

CEO

4.5

V

Emitter to base voltage

V

EBO

0.8

V

Collector current

I

C

35

mA

Collector power dissipation

Pc

100

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector to base breakdown

voltage

V

(BR)CBO

12

——V

I

C = 10 µA , IE = 0

Collector cutoff current

I

CBO

——

1

µAV

CB = 10 V , IE = 0

Collector cutoff current

I

CEO

——

1

µAV

CE = 4 V , RBE = ∞

Emitter cutoff current

I

EBO

——

12

µAV

EB = 0.8 V , IC = 0

DC current transfer ratio

h

FE

60

100

140

V

CE = 2 V , IC = 20 mA

Collector output capacitance

Cob

—

0.3

0.6

pF

V

CB = 2 V , IE = 0

f = 1 MHz

Gain bandwidth product

f

T

21

24

—

GHz

V

CE = 2 V , IC = 30 mA

f = 2 GHz

Power gain

PG

14

18

—

dB

V

CE = 2 V, IC = 30 mA

f = 1.8 GHz

Noise figure

NF

—

1.2

1.6

dB

V

CE = 2 V, IC = 5 mA

f = 1.8 GHz

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