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LV8573M Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LV8573M Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 18 page AC Electrical Characteristics VCC e 33V g10% VBB e 25V VPFAIL l VIH CL e 100 pF unless otherwise specified Symbol Parameter Min Max Units READ TIMING tAR Address Valid Prior to Read Strobe 10 ns tRW Read Strobe Width (Note 8) 100 ns tCD Chip Select to Data Valid Time 100 ns tRAH Address Hold after Read (Note 9) 2 ns tRD Read Strobe to Valid Data 90 ns tDZ Read or Chip Select to TRI-STATE 80 ns tRCH Chip Select Hold after Read Strobe (Note 9) 0 ns tDS Minimum Inactive Time between Read or Write Accesses 70 ns WRITE TIMING tAW Address Valid before Write Strobe 10 ns tWAH Address Hold after Write Strobe (Note 9) 2 ns tCW Chip Select to End of Write Strobe 110 ns tWW Write Strobe Width (Note 10) 100 ns tDW Data Valid to End of Write Strobe 70 ns tWDH Data Hold after Write Strobe (Note 9) 2 ns tWCH Chip Select Hold after Write Strobe (Note 9) 0 ns INTERRUPT TIMING tROLL Clock rollover to INTR out typically 20 ms Note 8 Read Strobe width as used in the read timing table is defined as the period when both chip select and read inputs are low Hence read commences when both signals are low and terminates when either signal returns high Note 9 Hold time is guaranteed by design but not production tested This limit is not used to calculate outgoing quality levels Note 10 Write Strobe width as used in the write timing table is defined as the period when both chip select and write inputs are low Hence write commences when both signals are low and terminates when either signal returns high AC Test Conditions Input Pulse Levels GND to 30V Input Rise and Fall Times 6 ns (10% – 90%) Input and Output 13V Reference Levels TRI-STATE Reference Active High a05V Levels (Note 12) Active Low b05V Note 11 CL e 100 pF includes jig and scope capacitance Note 12 S1 e VCC for active low to high impedance measurements S1 e GND for active high to high impedance measurements S1 e open for all other timing measurements Capacitance (TA e 25 C f e 1 MHz) Symbol Parameter Typ Units (Note 13) CIN Input Capacitance 5 pF COUT Output Capacitance 7 pF Note 13 This parameter is not 100% tested Note 14 Output rise and fall times 25 ns max (10%–90%) with 100 pF load TLF11418 – 2 3 |
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