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SI7726DN Datasheet(PDF) 3 Page - Vishay Siliconix

Part # SI7726DN
Description  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7726DN Datasheet(HTML) 3 Page - Vishay Siliconix

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Document Number: 68600
S-81737-Rev. B, 04-Aug-08
www.vishay.com
3
Vishay Siliconix
Si7726DN
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
35
A
Pulse Diode Forward Currenta
ISM
60
Body Diode Voltage
VSD
IS = 1 A
0.56
0.7
V
Body Diode Reverse Recovery Time
trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
22
40
ns
Body Diode Reverse Recovery Charge
Qrr
11
20
nC
Reverse Recovery Fall Time
ta
11
ns
Reverse Recovery Rise Time
tb
11


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