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LDC2114YFDT Datasheet(PDF) 5 Page - Texas Instruments |
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LDC2114YFDT Datasheet(HTML) 5 Page - Texas Instruments |
5 / 52 page 5 LDC2112, LDC2114 www.ti.com SNOSD15B – DECEMBER 2016 – REVISED APRIL 2017 Product Folder Links: LDC2112 LDC2114 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Maximum voltage across any two pins (not including SCL or SDA) is VDD + 0.3 V. 6 Specifications 6.1 Absolute Maximum Ratings Over operating temperature range unless otherwise noted. (1) MIN MAX UNIT VDD Supply voltage 2.2 V VI Voltage on SCL, SDA –0.3 3.6 V Voltage on any other pin –0.3 2.2(2) V TJ Junction temperature –40 85 ℃ TSTG Storage temperature –65 125 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V Charged device model (CDM), per JEDEC specification JESD22- C101(2) ±250 6.3 Recommended Operating Conditions Over operating temperature range unless otherwise noted. MIN NOM MAX UNIT VDD Supply voltage 1.71 1.89 V TJ Junction temperature –40 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) LDC2112/LDC2114 UNIT DSBGA TSSOP 16 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 81.8 105.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.4 40.3 °C/W RθJB Junction-to-board thermal resistance 18.2 50.2 °C/W ΨJT Junction-to-top characterization parameter 0.3 3.6 °C/W ΨJB Junction-to-board characterization parameter 18 49.6 °C/W |
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