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LPC660AIN Datasheet(PDF) 8 Page - National Semiconductor (TI) |
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LPC660AIN Datasheet(HTML) 8 Page - National Semiconductor (TI) |
8 / 17 page Typical Performance Characteristics V S = ± 7.5V, TA = 25˚C unless otherwise specified (Continued) Application Hints AMPLIFIER TOPOLOGY The topology chosen for the LPC660 is unconventional (compared to general-purpose op amps) in that the tradi- tional unity-gain buffer output stage is not used; instead, the output is taken directly from the output of the integrator, to al- low rail-to-rail output swing. Since the buffer traditionally de- livers the power to the load, while maintaining high op amp gain and stability, and must withstand shorts to either rail, these tasks now fall to the integrator. As a result of these demands, the integrator is a compound affair with an embedded gain stage that is doubly fed forward (via C f and Cff) by a dedicated unity-gain compensation driver. In addition, the output portion of the integrator is a push-pull configuration for delivering heavy loads. While sinking current the whole amplifier path consists of three gain stages with one stage fed forward, whereas while sourcing the path contains four gain stages with two fed forward. The large signal voltage gain while sourcing is comparable to traditional bipolar op amps, for load resistance of at least 5k Ω. The gain while sinking is higher than most CMOS op Inverting Large-Signal Pulse Response DS010547-46 Inverting Small-Signal Pulse Response DS010547-47 Stability vs Capacitive Load DS010547-4 Note: Avoid resistive loads of less than 500 Ω, as they may cause instability. Stability vs Capacitive Load DS010547-5 DS010547-6 FIGURE 1. LPC660 Circuit Topology (Each Amplifier) www.national.com 8 |
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