www.vishay.com

2

Document Number: 73164

S-80440-Rev. C, 03-Mar-08

Vishay Siliconix

Si7858ADP

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

0.6

0.95

1.5

V

Gate-Body Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

10

30

A

0.0020

0.0026

Ω

0.0029

0.0037

130

S

0.75

1.1

V

Input Capacitance

5700

pF

Output Capacitance

2680

Reverse Transfer Capacitance

1280

Total Gate Charge

54

80

nC

Gate-Source Charge

10

Gate-Drain Charge

16

Gate Resistance

0.5

1.2

2.0

Ω

Turn-On Delay Time

40

60

ns

Rise Time

40

60

Turn-Off Delay Time

140

210

Fall Time

70

100

Source-Drain Reverse Recovery Time

50

80

Output Characteristics

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

1.5 V

Transfer Characteristics

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

25 °C

- 55 °C