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SI7123DN Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7123DN Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 69655 S10-0347-Rev. D, 15-Feb-10 Vishay Siliconix Si7123DN New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 00.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = - 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0 0.01 0.02 0.03 0.04 1.32.3 3.34.3 TA = 25 °C TA = 150 °C ID = - 15 A 0 10 20 30 40 50 0.01 0.1 1.0 10 100 1000 Time (s) Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 10 ms 100 ms DC Limited byRDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1s 10 s TC = 25 °C Single Pulse |
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