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SI3417DV Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3417DV Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page Vishay Siliconix Si3417DV www.vishay.com 4 Document Number: 62890 S13-1815-Rev. A, 12-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = - 50 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =1mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.015 0.030 0.045 0.060 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 7.3A 0 50 10 Time (s) 20 1 100 600 10 10- 1 10- 2 10- 3 30 40 Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms T A = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 10s, 1 s DC, |
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