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U1GC44 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # U1GC44
Description  TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

U1GC44 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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U1BC44,U1GC44,U1JC44
2001-07-18
1
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
FOR HYBRID USE
l Average Forward Current
: IF (AV) = 1.0A
l Repetitive Peak Reverse Voltage
: VRRM = 100, 400, 600V
l Mini Plastic Mold Package
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
U1BC44
100
U1GC44
400
Repetitive Peak
Reverse Voltage
U1JC44
VRRM
600
V
On Ceramic Substrate
1.0
(Ta = 75°C)
Average
Forward
Current
On Glass−epoxy
Substrate
IF (AV)
0.9
(Ta = 25°C)
A
30 (50Hz)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
IFSM
33 (60Hz)
A
Junction Temperature
Tj
−40~150
°C
Storage Temperature Range
Tstg
−40~150
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 1.0A
―
―
1.2
V
Repetitive Peak Reverse
Current
IRRM
VRRM = Rated
―
―
10
µA
On ceramic substrate
―
―
60
Thermal Resistance
Rth (j−a)
DC
On glass-epoxy substrate
―
―
120
°C / W
STANDARD SOLDERING PAD
JEDEC
―
JEITA
―
TOSHIBA
3−4D1A
Weight: 0.06g
Unit: mm


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