IRF9530S, SiHF9530S

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Vishay Siliconix

S16-0754-Rev. D, 02-May-16

3

Document Number: 91077

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91077_01

Bottom

Top

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

T

- 4.5 V

Bottom

Top

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

T

91077_02

- 4.5 V

20 µs Pulse Width

V

56

7

8

9

10

4

25

175

91077_03

I

V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

91077_04

- 60- 40 - 20 0

20 40 60 80 100 120 140 160 180

1800

1500

1200

900

0

300

600

C

iss

C

rss

C

oss

V

C

C

C

91077_05

20

16

12

8

0

4

0

10

50

40

30

20

V

V

For test circuit

see figure 13

V

91077_06

I