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TMS55175 Datasheet(PDF) 9 Page - Texas Instruments |
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TMS55175 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 70 page  TMS55165, TMS55166, TMS55175, TMS55176 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS463 – DECEMBER 1995 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 Table 3. Pin Description Versus Operational Mode PIN DRAM TRANSFER SAM A0 – A8 Row, column address Row address, tap point RAS Row-address strobe Row-address strobe CAS Column-address strobe, DQ output enable Tap-address strobe DSF Block-write enable Load-write-mask-register enable Load-color-register enable CBR (option reset) Split-register-transfer enable TRG DQ output enable Transfer enable WEL WEU Write enable, write-per-bit enable DQx DRAM data I/O, write mask SC Serial clock SE SQ output enable, QSF output enable SQx Serial-data output QSF Serial-register status VCC† Power supply VSS† Ground NC/GND Make no external connection or tie to system GND † For proper device operation, all VCC pins must be connected to a 5.0-V supply and all VSS pins must be tied to ground. pin definitions address (A0 –A8) Eighteen address bits are required to decode one of 262 144 storage cell locations. Nine row-address bits are set up on pins A0 –A8 and latched onto the chip on the falling edge of RAS. Nine column-address bits are set up on pins A0 –A8 and latched onto the chip on the falling edge of CAS. All addresses must be stable on or before the falling edge of RAS and the falling edge of CAS. In 4-column block-write operations (TMS5516x), column-address bits A0 – A1 are ignored. Column-address bits A2 – A8 become the block address that selects one of the 128 blocks in the active row. In 8-column block write operations (TMS5517x), column-address bits A0 – A2 are ignored. Column address bits A3 – A8 become the block address that selects one of the 64 blocks in the active row. In full-register operations, column-address bit A8 selects which half of the active row in the DRAM is transferred to the SAM. Column address bits A0 –A7 select one of 256 tap points (starting positions) for the serial-data output. In split-register-transfer operations, column address bit A8 selects the DRAM half row. Column-address bit A7 is ignored. The internal serial-address counter identifies which half of the SAM is in use. If the high half of the SAM is in use, the low half of the SAM is loaded with the low half of the DRAM half row, and vice versa. Column-address bits A0 – A6 select one of 127 tap points (starting locations) for the serial output. Locations 127 and 255 are not valid tap points in split-register-transfer operations. In stop-point mode, stop-point locations are not valid tap points in split-register-transfer operations. row-address strobe (RAS) The falling edge of RAS latches the states of the row address, CAS, DSF, TRG, WEL, and WEU, and the DQs onto the chip to initiate DRAM and transfer functions. RAS also functions as a DRAM output enable. |
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